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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1707 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) is N-Channel MOS Field Effect 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain DESCRIPTION This product Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES * Low on-resistance RDS(on)1 = 10.0 m (TYP.) (VGS = 10 V, ID = 5.0 A) 1.44 1 5.37 MAX. +0.10 -0.05 4 6.0 0.3 4.4 0.8 RDS(on)2 = 12.5 m (TYP.) (VGS = 4.5 V, ID = 5.0 A) * Low Ciss: Ciss = 1400 pF (TYP.) * Built-in G-S protection diode * Small and surface mount package (Power SOP8) 1.8 MAX. RDS(on)3 = 14.0 m (TYP.) (VGS = 4.0 V, ID = 5.0 A) 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 PA1707G ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 20 10 40 2.0 150 -55 to +150 V V A A W C C Gate Protection Diode Source Gate Body Diode Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 1.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2 The information in this document is subject to change without notice. Document No. G13084EJ1V0DS00 (1st edition) Date Published January 1999 NS CP(K) Printed in Japan (c) 1998 PA1707 ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 5.0 A VGS = 4.5 V, ID = 5.0 A VGS = 4.0 V, ID = 5.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 5.0 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 10 A VDD = 24 V VGS = 10 V IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V di/dt = 100 A/ s 1400 450 180 20 185 65 40 26 4.2 6.5 0.8 30 25 1.5 5.0 MIN. TYP. 10.0 12.5 14.0 2.0 13 10 10 MAX. 13.5 18 21 2.5 UNIT m m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS IG = 2 mA VGS(on) 90 % VGS Wave Form RL VDD 0 10 % PG. 50 VGS 0 = 1 s Duty Cycle 1 % ID Wave Form 2 Data Sheet G13084EJ1V0DS00 PA1707 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 Mounted on ceramic substrate of 1200mm 2 x1.7mm 0 20 40 60 80 100 120 140 160 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 L0 n) (o =1 DS GS d ite im V) ID(pulse) ID - Drain Current - A R (V 1m 10 m s Note Mounted on ceramicsubstrate of 1200 mm x 1.7 mm 2 10 ID(DC) s Po 10 we rD iss 0m s ipa 1 tio n Lim ite d TC = 25 C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-a) = 62.5C/W 10 1 0.1 Mounted on ceramic substrate of 1200 mm 2 to 1.7 mm Single Single Pulse Pulse Channel to Ambient 1m 10 m 100 m 1 10 100 1000 10 000 0.01 0.001 100 PW - Pulse Width - s Data Sheet G13084EJ1V0DS00 3 PA1707 FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 50 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS = 10 V 4.5 V 4 V ID - Drain Current - A 10 ID - Drain Current - A 40 30 20 10 1 TA = 125C 75C 25C 0.1 0.01 -25C 0 1 2 VDS = 10 V 3 4 0 0.2 0.4 0.6 0.8 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S 100 RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 35 30 25 20 15 ID = 5 A 10 5 0 5 10 15 20 25 Pulsed 10 TA = -25C 25C 75C 125C 1 VDS =10 V Pulsed 0.1 1 10 100 VGS - Gate to Source Voltage - V ID- Drain Current - A RDS(on) - Drain to Source On-state Resistance - m VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 30 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.2 VDS = 10 V ID = 1 mA 1.8 20 VGS = 4 V 4.5 V 1.4 10 10 V 1.0 0 0.1 1 10 ID - Drain Current - A 100 0.6 -40 0 40 80 120 Tch - Channel Temperature - C 4 Data Sheet G13084EJ1V0DS00 PA1707 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed VGS = 4.0 V 15 4.5 V 10 V IF - Diode Forward Current - A 20 ID = 5 A 100 10 VGS = 4 V 1 0V 10 5 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 -40 0 40 80 120 140 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz Ciss tr 100 td(off) tf 10 td(on) 1000 Coss 100 Crss 10 0.1 1 10 30 100 1 0.1 VDS = 15 V VGS = 10 V RG = 10 1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 trr - Reverse Recovery Diode - ns VDS - Drain to Source Voltage - V 30 VDD = 24 V 15 V 6V VGS 12 10 8 6 100 20 10 10 4 2 1 0.1 1 10 100 0 0 4 8 12 16 20 24 28 0 32 ID - Drain Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V di/dt = 100A /s VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 10 A 14 Data Sheet G13084EJ1V0DS00 5 PA1707 [MEMO] 6 Data Sheet G13084EJ1V0DS00 PA1707 [MEMO] Data Sheet G13084EJ1V0DS00 7 PA1707 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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